Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 onsemi NTJD4401NT1G

RS-artikelnummer:: 184-1229
Tillv. art.nr:: NTJD4401NT1G
Tillverkare / varumärke:: onsemi

Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 onsemi NTJD4401NT1G

4200 I lager för avsändande samma dag

Lagt till varukorgen

Pris (ex. moms) Var (i ett paket med 100)

0,684 kr

(exkl. moms)

0,855 kr

(inkl. moms)

Enheter	Per unit	Per Pack*
100 +	0,684 kr	68,40 kr

RS-artikelnummer:: 184-1229
Tillv. art.nr:: NTJD4401NT1G
Tillverkare / varumärke:: onsemi

Datablad

Datasheet NTJD4401NT1G

Lagstiftning och ursprungsland

COO (Country of Origin):: CN

Produktdetaljer

This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.

Small Footprint (2 x 2 mm)
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion

Specifikationer

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	910 mA
Maximum Drain Source Voltage	20 V
Package Type	SC-88
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	440 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	550 mW
Maximum Gate Source Voltage	±12 V
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	1.3 nC @ 4.5 V
Length	2.2mm
Width	1.35mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1mm
Forward Diode Voltage	1.1V
Automotive Standard	AEC-Q101

RS-artikelnummer:: 184-1229
Tillv. art.nr:: NTJD4401NT1G
Tillverkare / varumärke:: onsemi

Datasheet NTJD4401NT1G