N-Channel MOSFET, 6 A, 1200 V, 3-Pin TO-220 STMicroelectronics STP6N120K3
- RS-artikelnummer:
- 168-8924
- Tillv. art.nr:
- STP6N120K3
- Tillverkare / varumärke:
- STMicroelectronics
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Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 50)
40,082 kr
(exkl. moms)
50,102 kr
(inkl. moms)
| Enheter | Per unit | Per Tube* |
| 50 + | 40,082 kr | 2 004,10 kr |
- RS-artikelnummer:
- 168-8924
- Tillv. art.nr:
- STP6N120K3
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 1200 V |
| Series | MDmesh, SuperMESH |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 4.6mm |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 10.4mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.6V |
| Height | 14.9mm |