P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1

RS-artikelnummer:: 165-5861
Tillv. art.nr:: BSS223PWH6327XTSA1
Tillverkare / varumärke:: Infineon

P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1

Tillfälligt slut i lager – restorder för leverans 2024-06-06

Pris (ex. moms) Var (i en rulle med 3000)

0,643 kr

(exkl. moms)

0,804 kr

(inkl. moms)

Enheter	Per unit	Per Reel*
3000 - 3000	0,643 kr	1 929,00 kr
6000 - 12000	0,611 kr	1 833,00 kr
15000 +	0,572 kr	1 716,00 kr

RS-artikelnummer:: 165-5861
Tillv. art.nr:: BSS223PWH6327XTSA1
Tillverkare / varumärke:: Infineon

BSS223PW OptiMOS-P Small Signal Transistor Datasheet
ESD Control Selection Guide V1

RS-artikelnummer:: 165-5861
Tillv. art.nr:: BSS223PWH6327XTSA1
Tillverkare / varumärke:: Infineon

BSS223PW OptiMOS-P Small Signal Transistor Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	310 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-323
Series	OptiMOS P
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.1 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	250 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	1
Width	1.25mm
Typical Gate Charge @ Vgs	0.5 nC @ 4.5 V
Transistor Material	Si
Length	2mm
Maximum Operating Temperature	+150 °C
Height	0.8mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	310 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-323
Series	OptiMOS P
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.1 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	250 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	1
Width	1.25mm
Typical Gate Charge @ Vgs	0.5 nC @ 4.5 V
Transistor Material	Si
Length	2mm
Maximum Operating Temperature	+150 °C
Height	0.8mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1

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