BSS84AKV,115 P-Channel MOSFET, -0.17 A, -50 V, 6-Pin SOT-666 Nexperia

  • RS-artikelnummer 153-1981
  • Tillv. art.nr BSS84AKV,115
  • Tillverkare / varumärke Nexperia
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
Produktdetaljer

50 V, 170 mA dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits

Specifikationer
Attribute Value
Channel Type P
Maximum Continuous Drain Current -0.17 A
Maximum Drain Source Voltage -50 V
Package Type SOT-666
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 13.5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage -2.1V
Minimum Gate Threshold Voltage -1.1V
Maximum Power Dissipation 1.09 W
Maximum Gate Source Voltage 20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Length 1.7mm
Automotive Standard AEC-Q101
Maximum Operating Temperature +150 °C
Height 0.6mm
Typical Gate Charge @ Vgs 0.26 nC
Width 1.3mm
12000 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (On a Reel of 4000)
0,66 kr
(exkl. moms)
0,82 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
4000 - 4000
0,66 kr
2 640,00 kr
8000 - 16000
0,605 kr
2 420,00 kr
20000 +
0,59 kr
2 360,00 kr