- RS-artikelnummer:
- 891-2759
- Tillv. art.nr:
- GT50MR21,Q(O
- Tillverkare / varumärke:
- Toshiba
Denna produkt har utgått
- RS-artikelnummer:
- 891-2759
- Tillv. art.nr:
- GT50MR21,Q(O
- Tillverkare / varumärke:
- Toshiba
Lagstiftning och ursprungsland
- COO (Country of Origin):
- JP
Produktdetaljer
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 900 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 230 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 0.4µs |
Transistor Configuration | Single |
Dimensions | 15.5 x 4.5 x 20mm |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 1500pF |
- RS-artikelnummer:
- 891-2759
- Tillv. art.nr:
- GT50MR21,Q(O
- Tillverkare / varumärke:
- Toshiba