- RS-artikelnummer:
- 862-9359
- Tillv. art.nr:
- ISL9V3040P3
- Tillverkare / varumärke:
- Fairchild Semiconductor
10 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 5)
35,688 kr
(exkl. moms)
44,61 kr
(inkl. moms)
Enheter | Per unit | Per Pack* |
5 - 5 | 35,688 kr | 178,44 kr |
10 - 95 | 28,746 kr | 143,73 kr |
100 - 495 | 23,60 kr | 118,00 kr |
500 - 995 | 19,896 kr | 99,48 kr |
1000 + | 17,056 kr | 85,28 kr |
- RS-artikelnummer:
- 862-9359
- Tillv. art.nr:
- ISL9V3040P3
- Tillverkare / varumärke:
- Fairchild Semiconductor
Lagstiftning och ursprungsland
Produktdetaljer
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 21 A |
Maximum Collector Emitter Voltage | 450 V |
Maximum Gate Emitter Voltage | ±14V |
Maximum Power Dissipation | 150 W |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 4.7 x 16.3mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |