STMicroelectronics STGP10NC60KD IGBT, 20 A 600 V, 3-Pin TO-220, Through Hole
- RS-artikelnummer:
- 686-8376
- Tillv. art.nr:
- STGP10NC60KD
- Tillverkare / varumärke:
- STMicroelectronics
Tillfälligt slut i lager – restorder för leverans 2025-02-03
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 5)
9,87 kr
(exkl. moms)
12,34 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 5 - 20 | 9,87 kr | 49,35 kr |
| 25 - 45 | 9,382 kr | 46,91 kr |
| 50 - 120 | 8,494 kr | 42,47 kr |
| 125 - 245 | 8,296 kr | 41,48 kr |
| 250 + | 8,074 kr | 40,37 kr |
- RS-artikelnummer:
- 686-8376
- Tillv. art.nr:
- STGP10NC60KD
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 9.15mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
- RS-artikelnummer:
- 686-8376
- Tillv. art.nr:
- STGP10NC60KD
- Tillverkare / varumärke:
- STMicroelectronics