ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

RS-artikelnummer:: 171-5593
Tillv. art.nr:: RGT30NS65DGC9
Tillverkare / varumärke:: ROHM

ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

I lager för avsändande samma dag

Nästa dag-leverans inte möjlig

Pris (ex. moms) Var (i ett paket med 5)

28,434 kr

(exkl. moms)

35,542 kr

(inkl. moms)

Enheter	Per unit	Per Pack*
5 - 45	28,434 kr	142,17 kr
50 - 95	25,552 kr	127,76 kr
100 - 245	23,20 kr	116,00 kr
250 - 495	21,338 kr	106,69 kr
500 +	19,718 kr	98,59 kr

RS-artikelnummer:: 171-5593
Tillv. art.nr:: RGT30NS65DGC9
Tillverkare / varumärke:: ROHM

Datablad

Lagstiftning och ursprungsland

COO (Country of Origin):: JP

Produktdetaljer

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating

Specifikationer

Attribute	Value
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	30V
Number of Transistors	1
Maximum Power Dissipation	133 W
Package Type	TO-262
Mounting Type	Through Hole
Channel Type	P
Pin Count	3+Tab
Transistor Configuration	Single
Dimensions	10.1 x 4.5 x 9mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-40 °C
Gate Capacitance	780pF

RS-artikelnummer:: 171-5593
Tillv. art.nr:: RGT30NS65DGC9
Tillverkare / varumärke:: ROHM