- RS-artikelnummer:
- 166-2051
- Tillv. art.nr:
- ISL9V5036S3ST
- Tillverkare / varumärke:
- Fairchild Semiconductor
Tillfälligt slut i lager – restorder för leverans 2025-02-11
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Pris (ex. moms) Var (i en rulle med 800)
22,854 kr
(exkl. moms)
28,568 kr
(inkl. moms)
Enheter | Per unit | Per Reel* |
800 + | 22,854 kr | 18 283,20 kr |
- RS-artikelnummer:
- 166-2051
- Tillv. art.nr:
- ISL9V5036S3ST
- Tillverkare / varumärke:
- Fairchild Semiconductor
Lagstiftning och ursprungsland
Produktdetaljer
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 46 A |
Maximum Collector Emitter Voltage | 420 V |
Maximum Gate Emitter Voltage | ±14V |
Maximum Power Dissipation | 250 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 9.65 x 4.83mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |