- RS-artikelnummer:
- 145-9729
- Tillv. art.nr:
- FF75R12RT4HOSA1
- Tillverkare / varumärke:
- Infineon
Tillfälligt slut i lager – restorder för leverans 2025-08-08
Lagt till varukorgen
Pris (ex. moms) Var (i en bricka med 10)
857,024 kr
(exkl. moms)
1 071,28 kr
(inkl. moms)
Enheter | Per unit | Per Tray* |
10 - 10 | 857,024 kr | 8 570,24 kr |
20 - 20 | 814,172 kr | 8 141,72 kr |
30 + | 762,759 kr | 7 627,59 kr |
- RS-artikelnummer:
- 145-9729
- Tillv. art.nr:
- FF75R12RT4HOSA1
- Tillverkare / varumärke:
- Infineon
Lagstiftning och ursprungsland
- COO (Country of Origin):
- MY
Produktdetaljer
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 395 W |
Package Type | 34MM Module |
Configuration | Series |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Series |
Dimensions | 94 x 34 x 30.2mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |
- RS-artikelnummer:
- 145-9729
- Tillv. art.nr:
- FF75R12RT4HOSA1
- Tillverkare / varumärke:
- Infineon