Infineon IKW40N60H3FKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS-artikelnummer:
- 145-8726
- Tillv. art.nr:
- IKW40N60H3FKSA1
- Tillverkare / varumärke:
- Infineon
Tillfälligt slut i lager – restorder för leverans 2025-06-12
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 30)
42,711 kr
(exkl. moms)
53,389 kr
(inkl. moms)
| Enheter | Per unit | Per Tube* |
| 30 - 30 | 42,711 kr | 1 281,33 kr |
| 60 - 120 | 40,575 kr | 1 217,25 kr |
| 150 + | 38,867 kr | 1 166,01 kr |
- RS-artikelnummer:
- 145-8726
- Tillv. art.nr:
- IKW40N60H3FKSA1
- Tillverkare / varumärke:
- Infineon
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 306 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.13 x 5.21 x 21.1mm |
| Energy Rating | 2.12mJ |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Gate Capacitance | 2190pF |