- RS-artikelnummer:
- 145-5381
- Tillv. art.nr:
- FGA15N120ANTDTU_F109
- Tillverkare / varumärke:
- onsemi
Tillfälligt slut i lager – restorder för leverans när den finns i lager
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 30)
13,944 kr
(exkl. moms)
17,43 kr
(inkl. moms)
Enheter | Per unit | Per Tube* |
30 + | 13,944 kr | 418,32 kr |
- RS-artikelnummer:
- 145-5381
- Tillv. art.nr:
- FGA15N120ANTDTU_F109
- Tillverkare / varumärke:
- onsemi
Lagstiftning och ursprungsland
- COO (Country of Origin):
- MY
Produktdetaljer
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 24 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-3PN |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.8 x 5 x 18.9mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
- RS-artikelnummer:
- 145-5381
- Tillv. art.nr:
- FGA15N120ANTDTU_F109
- Tillverkare / varumärke:
- onsemi