Renesas Electronics RJH65D27BDPQ-A0#T2 IGBT, 100 A 650 V, 3-Pin TO-247A, Through Hole
- RS-artikelnummer:
- 124-0907P
- Tillv. art.nr:
- RJH65D27BDPQ-A0#T2
- Tillverkare / varumärke:
- Renesas Electronics
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Lagt till varukorgen
Pris (ex. moms) Varje (levereras i ett rör)
46,53 kr
(exkl. moms)
58,16 kr
(inkl. moms)
| Enheter | Per unit |
| 5 - 9 | 46,53 kr |
| 10 - 49 | 43,32 kr |
| 50 - 99 | 38,15 kr |
| 100 + | 37,02 kr |
- RS-artikelnummer:
- 124-0907P
- Tillv. art.nr:
- RJH65D27BDPQ-A0#T2
- Tillverkare / varumärke:
- Renesas Electronics
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-247A |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.94 x 5.02 x 21.13mm |
| Gate Capacitance | 2850pF |
| Maximum Operating Temperature | +175 °C |
- RS-artikelnummer:
- 124-0907P
- Tillv. art.nr:
- RJH65D27BDPQ-A0#T2
- Tillverkare / varumärke:
- Renesas Electronics