Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole
- RS-artikelnummer:
- 110-9135
- Tillv. art.nr:
- 7MBR50VB-120-50
- Tillverkare / varumärke:
- Fuji Electric
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Restorder ej möjlig på grund av bristande allokering. Den evt. angivna systemtekniska leveranstiden är inte giltig.
Lagt till varukorgen
Pris (ex. moms) Varje
764,52 kr
(exkl. moms)
955,65 kr
(inkl. moms)
| Enheter | Per unit |
| 1 + | 764,52 kr |
- RS-artikelnummer:
- 110-9135
- Tillv. art.nr:
- 7MBR50VB-120-50
- Tillverkare / varumärke:
- Fuji Electric
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Modules 7-Pack, Fuji Electric
V-Series
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 280 W |
| Configuration | 3 Phase Bridge |
| Package Type | M712 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 24 |
| Transistor Configuration | 3 Phase |
| Dimensions | 122 x 62 x 17mm |
| Maximum Operating Temperature | +150 °C |
- RS-artikelnummer:
- 110-9135
- Tillv. art.nr:
- 7MBR50VB-120-50
- Tillverkare / varumärke:
- Fuji Electric