Semikron SKM145GB066D, SEMITRANS2 Dual Half Bridge IGBT Module, 195 A max, 600 V, Panel Mount

  • RS-artikelnummer 505-3138
  • Tillv. art.nr SKM145GB066D
  • Tillverkare / varumärke Semikron
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
Produktdetaljer

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

//media.rs-online.com/t_line/L330173-06.gif

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Configuration Dual Half Bridge
Transistor Configuration Series
Maximum Continuous Collector Current 195 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS2
Pin Count 7
Dimensions 94 x 34 x 29.5mm
Height 29.5mm
Length 94mm
Maximum Operating Temperature +175 °C
Width 34mm
Minimum Operating Temperature -40 °C
48 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each
1 222,50 kr
(exkl. moms)
1 528,12 kr
(inkl. moms)
Enheter
Per unit
1 - 1
1 222,50 kr
2 - 4
1 161,29 kr
5 - 9
1 013,73 kr
10 - 19
908,37 kr
20 +
863,08 kr
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
A range of advanced Smart Power Modules from ...
Description:
A range of advanced Smart Power Modules from Fairchild Semiconductor which provide compact high performance solutions for many inverter motor drive applications. The modules integrate optimized gate drive for the built-in power MOSFETs to minimize EMI and losses and also ...
The Infineon range of IGBT Modules offer low ...
Description:
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...