Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount
- RS-artikelnummer:
- 168-8761
- Tillv. art.nr:
- F475R12KS4B11BOSA1
- Tillverkare / varumärke:
- Infineon
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Pris (ex. moms) Var (i en låda med 10)
1 159,881 kr
(exkl. moms)
1 449,851 kr
(inkl. moms)
| Enheter | Per unit | Per Box* |
| 10 + | 1 159,881 kr | 11 598,81 kr |
- RS-artikelnummer:
- 168-8761
- Tillv. art.nr:
- F475R12KS4B11BOSA1
- Tillverkare / varumärke:
- Infineon
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 500 W |
| Package Type | ECONO2 |
| Configuration | Dual Half Bridge |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 24 |
| Switching Speed | 1MHz |
| Transistor Configuration | Dual Half Bridge |
| Dimensions | 107.5 x 45 x 17mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +125 °C |