- RS-artikelnummer:
- 194-8804
- Tillv. art.nr:
- CY15B104QI-20LPXI
- Tillverkare / varumärke:
- Cypress Semiconductor
Denna produkt har utgått
- RS-artikelnummer:
- 194-8804
- Tillv. art.nr:
- CY15B104QI-20LPXI
- Tillverkare / varumärke:
- Cypress Semiconductor
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Low power, 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferro-electric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities,overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.Unlike serial flash and EEPROM, performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. Product offers substantial write endurance compared to other nonvolatile memories. Capable of supporting 1015 read/write cycles, or 1000 million times morewrite cycles than EEPROM. Ideal for nonvolatile memory applications, requiring frequent or rapid writes. Provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.
Specifikationer
Attribute | Value |
---|---|
Memory Size | 4Mbit |
Organisation | 512K x 8 bit |
Interface Type | Serial-SPI |
Data Bus Width | 8bit |
Mounting Type | Surface Mount |
Package Type | GQFN |
Pin Count | 8 |
Dimensions | 3.28 x 3.33 x 0.5mm |
Maximum Operating Supply Voltage | 3.6 V |
Maximum Operating Temperature | +85 °C |
Number of Bits per Word | 8bit |
Number of Words | 512K |
Minimum Operating Temperature | -40 °C |
Minimum Operating Supply Voltage | 1.8 V |
- RS-artikelnummer:
- 194-8804
- Tillv. art.nr:
- CY15B104QI-20LPXI
- Tillverkare / varumärke:
- Cypress Semiconductor