ON Semiconductor, FJPF2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.209V, 3-Pin TO-220F

  • RS-artikelnummer 864-8969
  • Tillv. art.nr FJPF2145TU
  • Tillverkare / varumärke ON Semiconductor
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
Produktdetaljer

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 5 A
Maximum Collector Source Voltage 0.209V
Maximum Power Dissipation 40 W
Minimum DC Current Gain 8
Mounting Type Through Hole
Package Type TO-220F
Pin Count 3
Maximum Base Source Voltage ±20V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Base Current 1.5A
Category Power Transistor
Dimensions 10.36 x 4.9 x 16.07mm
Height 16.07mm
Maximum Operating Temperature +125 °C
Minimum Operating Temperature -55 °C
Width 4.9mm
Length 10.36mm
290 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 10)
7,021 kr
(exkl. moms)
8,776 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
10 +
7,021 kr
70,21 kr
Förpackningsalternativ:
Related Products
The ON Semiconductor MJE15032G is a 250V, 8A ...
Description:
The ON Semiconductor MJE15032G is a 250V, 8A NPN bipolar transistor within a TO-220-3 package. This bipolar power transistor is for use as high-frequency driver in audio amplifier applications. • High DC current gain• High current gain - bandwidth product• ...
A range of ultra-low-noise wideband NPN bipolar RF ...
Description:
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. ...
100 V, 3 A NPN high power bipolar ...
Description:
100 V, 3 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61003PY. High thermal power dissipation capabilitySuitable for high temperature applications up to 175 °CReduced ...
Medium power transistors, Robust and efficient solutions suitable ...
Description:
Medium power transistors, Robust and efficient solutions suitable for many applications, Our medium power transistors are automotive qualified according to AEC-Q101, ensuring they make highly reliable solutions for a broad spectrum applications. You also have a choice of three packages, ...