onsemi TIP110G NPN Darlington Transistor, 5 A dc 60 V dc HFE:500, 3-Pin TO-220
- RS-artikelnummer:
- 186-7439
- Tillv. art.nr:
- TIP110G
- Tillverkare / varumärke:
- onsemi
Tillfälligt slut i lager – restorder för leverans 2024-08-05
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 50)
7,255 kr
(exkl. moms)
9,069 kr
(inkl. moms)
| Enheter | Per unit | Per Tube* |
| 50 - 50 | 7,255 kr | 362,75 kr |
| 100 - 450 | 5,252 kr | 262,60 kr |
| 500 - 950 | 4,469 kr | 223,45 kr |
| 1000 - 2450 | 3,866 kr | 193,30 kr |
| 2500 + | 3,855 kr | 192,75 kr |
- RS-artikelnummer:
- 186-7439
- Tillv. art.nr:
- TIP110G
- Tillverkare / varumärke:
- onsemi
Datablad
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN), TIP115, TIP116, TIP117 (PNP) are complementary devices.
High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Specifikationer
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 5 A dc |
| Maximum Collector Emitter Voltage | 60 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Configuration | Single |
| Transistor Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 500 |
| Maximum Collector Base Voltage | 60 V dc |
| Maximum Collector Emitter Saturation Voltage | 2.5 V dc |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Length | 10.53mm |
| Dimensions | 10.53 x 4.83 x 15.75mm |
| Maximum Power Dissipation | 50 W |
| Height | 15.75mm |
| Width | 4.83mm |