NXP PBHV8118T,215 NPN Transistor, 1 A, 180 V, 3-Pin SOT-23

  • RS-artikelnummer 816-0649
  • Tillv. art.nr PBHV8118T,215
  • Tillverkare / varumärke Nexperia
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 180 V
Package Type SOT-23
Mounting Type Surface Mount
Maximum Power Dissipation 300 mW
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 400 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 100 MHz
Pin Count 3
Number of Elements per Chip 1
Height 1.1mm
Width 1.4mm
Maximum Collector Emitter Saturation Voltage 60 mV
Maximum Operating Temperature +150 °C
Length 3mm
Dimensions 3 x 1.4 x 1.1mm
Maximum Base Emitter Saturation Voltage 1.2 V
Minimum Operating Temperature -55 °C
2730 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 30)
1,71 kr
(exkl. moms)
2,14 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
30 - 30
1,71 kr
51,30 kr
60 - 120
1,289 kr
38,67 kr
150 - 270
1,151 kr
34,53 kr
300 - 570
1,124 kr
33,72 kr
600 +
1,093 kr
32,79 kr
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