onsemi MJE200G NPN Transistor, 10 A, 40 V, 3-Pin TO-225
- RS-artikelnummer:
- 184-4314
- Tillv. art.nr:
- MJE200G
- Tillverkare / varumärke:
- onsemi
500 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i en låda med 500)
4,232 kr
(exkl. moms)
5,29 kr
(inkl. moms)
| Enheter | Per unit | Per Box* |
| 500 - 500 | 4,232 kr | 2 116,00 kr |
| 1000 - 2000 | 3,466 kr | 1 733,00 kr |
| 2500 - 9500 | 3,441 kr | 1 720,50 kr |
| 10000 + | 3,42 kr | 1 710,00 kr |
- RS-artikelnummer:
- 184-4314
- Tillv. art.nr:
- MJE200G
- Tillverkare / varumärke:
- onsemi
Datablad
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
Specifikationer
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 40 V |
| Package Type | TO-225 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 15 W |
| Minimum DC Current Gain | 45 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 25 V dc |
| Maximum Emitter Base Voltage | 8 V dc |
| Maximum Operating Frequency | 10 MHz |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Dimensions | 7.8 x 3 x 11.1mm |
| Maximum Operating Temperature | +150 °C |