Nexperia PBSS4160DS,115 Dual NPN Transistor, 1 A, 60 V, 6-Pin TSOP

  • RS-artikelnummer 166-1569
  • Tillv. art.nr PBSS4160DS,115
  • Tillverkare / varumärke Nexperia
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Produktdetaljer

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 60 V
Package Type TSOP
Mounting Type Surface Mount
Maximum Power Dissipation 700 mW
Minimum DC Current Gain 100
Transistor Configuration Isolated
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 220 MHz
Pin Count 6
Number of Elements per Chip 2
Maximum Collector Emitter Saturation Voltage 0.25 V
Height 1mm
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +150 °C
Width 1.7mm
Length 3.1mm
Maximum Base Emitter Saturation Voltage 1.1 V
Dimensions 1 x 3.1 x 1.7mm
21000 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (On a Reel of 3000)
0,906 kr
(exkl. moms)
1,132 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
3000 +
0,906 kr
2 718,00 kr
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