Infineon BFP640ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343

  • RS-artikelnummer 145-8845
  • Tillv. art.nr BFP640ESDH6327XTSA1
  • Tillverkare / varumärke Infineon
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 50 mA
Maximum Collector Emitter Voltage 4.1 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 200 mW
Transistor Configuration Single
Maximum Collector Base Voltage 4.8 V
Maximum Emitter Base Voltage 0.5 V
Maximum Operating Frequency 45 GHz
Pin Count 4
Number of Elements per Chip 1
Dimensions 2 x 1.25 x 0.9mm
Maximum Operating Temperature +150 °C
Tillfälligt slut i lager – restorder för leverans 2021-02-16
Pris (ex. moms) Each (On a Reel of 3000)
1,931 kr
(exkl. moms)
2,414 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
3000 +
1,931 kr
5 793,00 kr
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