N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220AB Vishay IRF830APBF
- RS-artikelnummer:
- 178-0834
- Tillv. art.nr:
- IRF830APBF
- Tillverkare / varumärke:
- Vishay
850 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 50)
19,632 kr
(exkl. moms)
24,54 kr
(inkl. moms)
| Enheter | Per unit | Per Tube* |
| 50 - 50 | 19,632 kr | 981,60 kr |
| 100 - 200 | 18,649 kr | 932,45 kr |
| 250 + | 17,669 kr | 883,45 kr |
- RS-artikelnummer:
- 178-0834
- Tillv. art.nr:
- IRF830APBF
- Tillverkare / varumärke:
- Vishay
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
MOSFET Transistors, Vishay Semiconductor
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 74 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V |
| Length | 10.41mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 4.7mm |
| Height | 9.01mm |
| Minimum Operating Temperature | -55 °C |