BTA316X-600E 16A, 600V, TRIAC, Gate Trigger 1.5V 10mA, 3-pin, Through Hole, TO-220F WeEn Semiconductors Co., Ltd

Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

TRIACs

A range of TRIACs (Triodes for Alternating Current is also known as Bidirectional Thyristors). They are used in AC switching and control applications with current ratings from under 1A to 40A rms. A TRIAC makes a convenient switch for alternating current circuit.

Specifikationer
Attribute Value
Rated Average On-State Current 16A
Mounting Type Through Hole
Package Type TO-220F
Maximum Gate Trigger Current 10mA
Repetitive Peak Reverse Voltage 600V
Surge Current Rating 150A
Pin Count 3
Maximum Gate Trigger Voltage 1.5V
Repetitive Peak Forward Blocking Voltage 600V
Maximum Holding Current 15mA
Dimensions 10.3 x 4.6 x 15.8mm
Length 10.3mm
Width 4.6mm
Height 15.8 (With Tab)mm
Maximum Operating Temperature +125 °C
Repetitive Peak Off-State Current 0.5mA
Peak On-State Voltage 1.5V
100 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (On a Reel of 50)
9,141 kr
(exkl. moms)
11,426 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
50 - 200
9,141 kr
457,05 kr
250 - 950
6,589 kr
329,45 kr
1000 - 2450
4,643 kr
232,15 kr
2500 +
4,527 kr
226,35 kr
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...