Infineon Diode, 3-Pin D2PAK (TO-263) IDB30E120ATMA1

RS-artikelnummer:: 827-5104
Tillv. art.nr:: IDB30E120ATMA1
Tillverkare / varumärke:: Infineon

Infineon Diode, 3-Pin D2PAK (TO-263) IDB30E120ATMA1

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RS-artikelnummer:: 827-5104
Tillv. art.nr:: IDB30E120ATMA1
Tillverkare / varumärke:: Infineon

Datablad

Lagstiftning och ursprungsland

RoHS-status: Undantagen

Produktdetaljer

Fast Switching Emitter Controlled Diodes, Infineon

The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.

Rapid 1 diode switches between 18kHz and 40kHz
1.35V temperature-stable forward voltage
Ideal for Power Factor Correction (PFC) topologies

The Rapid 2 diode switches between 40 kHz and 100 kHz
Low reverse recovery charge: forward voltage ratio for BiC performance
Low reverse recovery time
Low turn-on losses on the boost switch

Ultra-fast Diode 600 V/1200 V Emitter Controlled technology
Qualified according to JEDEC Standard
Good EMI behaviour
Low conduction losses
Easy paralleling

Diodes and Rectifiers, Infineon

Specifikationer

Attribute	Value
Diode Configuration	Single
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK (TO-263)
Diode Technology	Silicon Junction
Maximum Forward Voltage Drop	1.65V
Pin Count	3
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+150 °C
Length	10.31mm
Width	9.45mm
Height	4.57mm
Dimensions	10.31 x 9.45 x 4.57mm

RS-artikelnummer:: 827-5104
Tillv. art.nr:: IDB30E120ATMA1
Tillverkare / varumärke:: Infineon