Infineon 1200V 22.8A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH08G120C5XKSA1
- RS-artikelnummer:
- 133-8555
- Tillv. art.nr:
- IDH08G120C5XKSA1
- Tillverkare / varumärke:
- Infineon
Tillfälligt slut i lager – restorder för leverans 2026-03-26
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 500)
27,658 kr
(exkl. moms)
34,572 kr
(inkl. moms)
| Enheter | Per unit | Per Tube* |
| 500 + | 27,658 kr | 13 829,00 kr |
- RS-artikelnummer:
- 133-8555
- Tillv. art.nr:
- IDH08G120C5XKSA1
- Tillverkare / varumärke:
- Infineon
Lagstiftning och ursprungsland
- COO (Country of Origin):
- MY
Produktdetaljer
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
Specifikationer
Attribute | Value |
|---|---|
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Maximum Continuous Forward Current | 22.8A |
| Peak Reverse Repetitive Voltage | 1200V |
| Diode Configuration | Single |
| Rectifier Type | Schottky Diode |
| Diode Type | SiC Schottky |
| Pin Count | 2 + Tab |
| Maximum Forward Voltage Drop | 2.85V |
| Number of Elements per Chip | 1 |
| Diode Technology | SiC Schottky |
| Peak Non-Repetitive Forward Surge Current | 70A |
- RS-artikelnummer:
- 133-8555
- Tillv. art.nr:
- IDH08G120C5XKSA1
- Tillverkare / varumärke:
- Infineon