SI7288DP-T1-GE3 Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO Vishay

  • RS-artikelnummer 919-4334
  • Tillv. art.nr SI7288DP-T1-GE3
  • Tillverkare / varumärke Vishay
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifikationer
Attribute Value
Channel Type N
Maximum Continuous Drain Current 20 A
Maximum Drain Source Voltage 40 V
Package Type PowerPAK SO
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 22 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 15.6 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 10 nC @ 10 V
Length 5.99mm
Height 1.07mm
Width 5mm
Transistor Material Si
9000 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (On a Reel of 3000)
5,573 kr
(exkl. moms)
6,966 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
3000 - 6000
5,573 kr
16 719,00 kr
9000 +
5,462 kr
16 386,00 kr