SI2333DDS-T1-GE3 P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Vishay

  • RS-artikelnummer 919-4220
  • Tillv. art.nr SI2333DDS-T1-GE3
  • Tillverkare / varumärke Vishay
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifikationer
Attribute Value
Channel Type P
Maximum Continuous Drain Current 6 A
Maximum Drain Source Voltage 12 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 19 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 1.7 W
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +8 V
Number of Elements per Chip 1
Length 3.04mm
Minimum Operating Temperature -55 °C
Transistor Material Si
Height 1.02mm
Width 1.4mm
Typical Gate Charge @ Vgs 23 nC @ 8 V
Maximum Operating Temperature +150 °C
66000 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (On a Reel of 3000)
1,338 kr
(exkl. moms)
1,672 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
3000 - 6000
1,338 kr
4 014,00 kr
9000 +
1,271 kr
3 813,00 kr