N-Channel MOSFET, 200 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19535KTTT

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Datablad

MOSFET Transistors, Texas Instruments

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	200 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.1 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	9.65mm
Length	10.67mm
Typical Gate Charge @ Vgs	75 nC @ 0 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Series	NexFET
Minimum Operating Temperature	-55 °C
Height	4.83mm
Forward Diode Voltage	1.1V