N-Channel MOSFET, 90 A, 60 V, 3-Pin D2PAK Infineon IPB90N06S4L04ATMA2
- RS-artikelnummer:
- 826-9046
- Tillv. art.nr:
- IPB90N06S4L04ATMA2
- Tillverkare / varumärke:
- Infineon
Denna produkt har utgått
Alternativ
Denna produkt är för närvarande inte tillgänglig. Vi rekommenderar denna produkt istället.
- RS-artikelnummer:
- 826-9046
- Tillv. art.nr:
- IPB90N06S4L04ATMA2
- Tillverkare / varumärke:
- Infineon
Lagstiftning och ursprungsland
RoHS-status: Undantagen
Produktdetaljer
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 90 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5.9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Transistor Material | Si |
| Width | 9.25mm |
| Typical Gate Charge @ Vgs | 133 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Length | 10mm |
| Number of Elements per Chip | 1 |
| Height | 4.4mm |
| Minimum Operating Temperature | -55 °C |
| Series | OptiMOS T2 |