SiC N-Channel MOSFET Transistor, 14 A, 1200 V, 3-Pin TO-247 ROHM SCT2280KEC
- RS-artikelnummer:
- 826-6902
- Tillv. art.nr:
- SCT2280KEC
- Tillverkare / varumärke:
- ROHM
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Pris (ex. moms) Varje
80,73 kr
(exkl. moms)
100,91 kr
(inkl. moms)
| Enheter | Per unit |
| 1 - 4 | 80,73 kr |
| 5 - 6 | 64,74 kr |
| 7 - 14 | 60,32 kr |
| 15 - 29 | 58,89 kr |
| 30 + | 57,72 kr |
- RS-artikelnummer:
- 826-6902
- Tillv. art.nr:
- SCT2280KEC
- Tillverkare / varumärke:
- ROHM
Lagstiftning och ursprungsland
Produktdetaljer
N-Channel SiC MOSFET Transistors, ROHM
Silicon Carbide (SiC) MOSFETs feature lower switching losses and superior high temperature operating characteristics than their silicon counterparts and are ideally suited to high-efficiency high frequency switching applications.
MOSFET Transistors, ROHM Semiconductor
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 388 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 108 W |
| Transistor Configuration | Single |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 36 nC @ 18 V |
| Length | 15.9mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 20.95mm |
| Height | 5.03mm |
- RS-artikelnummer:
- 826-6902
- Tillv. art.nr:
- SCT2280KEC
- Tillverkare / varumärke:
- ROHM