Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SI7288DP-T1-GE3
- RS-artikelnummer:
- 818-1390
- Tillv. art.nr:
- SI7288DP-T1-GE3
- Tillverkare / varumärke:
- Vishay
11540 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 10)
14,816 kr
(exkl. moms)
18,52 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 10 - 90 | 14,816 kr | 148,16 kr |
| 100 - 240 | 14,073 kr | 140,73 kr |
| 250 - 490 | 11,855 kr | 118,55 kr |
| 500 - 990 | 11,112 kr | 111,12 kr |
| 1000 + | 10,369 kr | 103,69 kr |
- RS-artikelnummer:
- 818-1390
- Tillv. art.nr:
- SI7288DP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | PowerPAK SO-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 22 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 15.6 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 5mm |
| Maximum Operating Temperature | +150 °C |
| Length | 5.99mm |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 1.07mm |
- RS-artikelnummer:
- 818-1390
- Tillv. art.nr:
- SI7288DP-T1-GE3
- Tillverkare / varumärke:
- Vishay