SI7288DP-T1-GE3 Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO Vishay

  • RS-artikelnummer 818-1390
  • Tillv. art.nr SI7288DP-T1-GE3
  • Tillverkare / varumärke Vishay
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifikationer
Attribute Value
Channel Type N
Maximum Continuous Drain Current 20 A
Maximum Drain Source Voltage 40 V
Package Type PowerPAK SO
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 22 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 15.6 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Width 5mm
Height 1.07mm
Length 5.99mm
Maximum Operating Temperature +150 °C
Transistor Material Si
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 10 nC @ 10 V
260 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 10)
10,919 kr
(exkl. moms)
13,649 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
10 - 20
10,919 kr
109,19 kr
30 - 140
8,996 kr
89,96 kr
150 - 740
7,827 kr
78,27 kr
750 - 1490
6,576 kr
65,76 kr
1500 +
5,894 kr
58,94 kr
Förpackningsalternativ: