SI2366DS-T1-GE3 N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay

  • RS-artikelnummer 812-3132
  • Tillv. art.nr SI2366DS-T1-GE3
  • Tillverkare / varumärke Vishay
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifikationer
Attribute Value
Channel Type N
Maximum Continuous Drain Current 5.8 A
Maximum Drain Source Voltage 30 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 42 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 2.1 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 1.02mm
Transistor Material Si
Width 1.4mm
Typical Gate Charge @ Vgs 6.4 nC @ 10 V
Length 3.04mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
1620 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 20)
4,054 kr
(exkl. moms)
5,068 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
20 - 280
4,054 kr
81,08 kr
300 - 580
3,04 kr
60,80 kr
600 - 1480
2,229 kr
44,58 kr
1500 - 2980
1,856 kr
37,12 kr
3000 +
1,81 kr
36,20 kr
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