- RS-artikelnummer:
- 809-8991
- Tillv. art.nr:
- C2M0080120D
- Tillverkare / varumärke:
- Wolfspeed
- RS-artikelnummer:
- 809-8991
- Tillv. art.nr:
- C2M0080120D
- Tillverkare / varumärke:
- Wolfspeed
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Specifikationer
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 31 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 208 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.2V |
Minimum Gate Threshold Voltage | 1.7V |
Maximum Power Dissipation | 208 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -10 V, +25 V |
Transistor Material | SiC |
Length | 16.13mm |
Typical Gate Charge @ Vgs | 49.2 nC @ 20 V |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Width | 5.21mm |
Height | 21.1mm |
Minimum Operating Temperature | -55 °C |