N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STMicroelectronics STH3N150-2
- RS-artikelnummer:
- 792-5861
- Tillv. art.nr:
- STH3N150-2
- Tillverkare / varumärke:
- STMicroelectronics
Tillfälligt slut i lager – restorder för leverans 2025-05-28
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 2)
55,465 kr
(exkl. moms)
69,331 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 2 - 8 | 55,465 kr | 110,93 kr |
| 10 - 18 | 52,075 kr | 104,15 kr |
| 20 - 48 | 49,34 kr | 98,68 kr |
| 50 - 98 | 46,55 kr | 93,10 kr |
| 100 + | 44,36 kr | 88,72 kr |
- RS-artikelnummer:
- 792-5861
- Tillv. art.nr:
- STH3N150-2
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
Produktdetaljer
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Voltage | 1500 V |
| Package Type | H2PAK-2 |
| Series | MDmesh |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 15.8mm |
| Number of Elements per Chip | 1 |
| Length | 10.4mm |
| Typical Gate Charge @ Vgs | 29.3 nC @ 10 V |
| Height | 4.8mm |
- RS-artikelnummer:
- 792-5861
- Tillv. art.nr:
- STH3N150-2
- Tillverkare / varumärke:
- STMicroelectronics