- RS-artikelnummer:
- 754-5434
- Tillv. art.nr:
- IPB107N20N3GATMA1
- Tillverkare / varumärke:
- Infineon
860 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Varje
81,17 kr
(exkl. moms)
101,46 kr
(inkl. moms)
Enheter | Per unit |
1 - 9 | 81,17 kr |
10 - 24 | 73,08 kr |
25 - 49 | 69,03 kr |
50 - 99 | 64,22 kr |
100 + | 59,29 kr |
- RS-artikelnummer:
- 754-5434
- Tillv. art.nr:
- IPB107N20N3GATMA1
- Tillverkare / varumärke:
- Infineon
Lagstiftning och ursprungsland
Produktdetaljer
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifikationer
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 88 A |
Maximum Drain Source Voltage | 200 V |
Series | OptiMOS |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 11 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 300 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 65 nC @ 10 V |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Length | 10.31mm |
Width | 9.45mm |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 4.57mm |
- RS-artikelnummer:
- 754-5434
- Tillv. art.nr:
- IPB107N20N3GATMA1
- Tillverkare / varumärke:
- Infineon