P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3
- RS-artikelnummer:
- 710-3250P
- Tillv. art.nr:
- SI2309CDS-T1-GE3
- Tillverkare / varumärke:
- Vishay
15000 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Varje (levereras i en rulle) Quantities below 150 on continuous strip
4,724 kr
(exkl. moms)
5,905 kr
(inkl. moms)
| Enheter | Per unit |
| 10 + | 4,724 kr |
- RS-artikelnummer:
- 710-3250P
- Tillv. art.nr:
- SI2309CDS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Lagstiftning och ursprungsland
Produktdetaljer
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.2 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 345 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 3.04mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 2.7 nC @ 4.5 V |
| Width | 1.4mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.02mm |
- RS-artikelnummer:
- 710-3250P
- Tillv. art.nr:
- SI2309CDS-T1-GE3
- Tillverkare / varumärke:
- Vishay