SI2309CDS-T1-GE3 P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay

  • RS-artikelnummer 710-3250
  • Tillv. art.nr SI2309CDS-T1-GE3
  • Tillverkare / varumärke Vishay
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
Produktdetaljer

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifikationer
Attribute Value
Channel Type P
Maximum Continuous Drain Current 1.2 A
Maximum Drain Source Voltage 60 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 345 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 1.02mm
Typical Gate Charge @ Vgs 2.7 nC @ 4.5 V
Transistor Material Si
Minimum Operating Temperature -55 °C
Width 1.4mm
Length 3.04mm
Maximum Operating Temperature +150 °C
530 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 10)
3,567 kr
(exkl. moms)
4,459 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
10 - 20
3,567 kr
35,67 kr
30 - 140
2,316 kr
23,16 kr
150 - 740
2,037 kr
20,37 kr
750 - 1490
1,985 kr
19,85 kr
1500 +
1,944 kr
19,44 kr
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