N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXYS IXTH12N100L
- RS-artikelnummer:
- 686-7840
- Tillv. art.nr:
- IXTH12N100L
- Tillverkare / varumärke:
- IXYS
25 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Varje
222,63 kr
(exkl. moms)
278,29 kr
(inkl. moms)
| Enheter | Per unit |
| 1 - 1 | 222,63 kr |
| 2 - 4 | 183,57 kr |
| 5 - 9 | 178,10 kr |
| 10 - 19 | 173,07 kr |
| 20 + | 164,54 kr |
- RS-artikelnummer:
- 686-7840
- Tillv. art.nr:
- IXTH12N100L
- Tillverkare / varumärke:
- IXYS
Lagstiftning och ursprungsland
Produktdetaljer
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage | 1000 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.3 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 400 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 16.26mm |
| Typical Gate Charge @ Vgs | 155 nC @ 20 V |
| Width | 5.3mm |
| Height | 21.46mm |
| Minimum Operating Temperature | -55 °C |
| Series | Linear |
- RS-artikelnummer:
- 686-7840
- Tillv. art.nr:
- IXTH12N100L
- Tillverkare / varumärke:
- IXYS