SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 onsemi NTH4L015N065SC1
- RS-artikelnummer:
- 229-6458P
- Tillv. art.nr:
- NTH4L015N065SC1
- Tillverkare / varumärke:
- onsemi
Tillfälligt slut i lager – restorder för leverans 2024-09-03
Lagt till varukorgen
Pris (ex. moms) Varje (levereras i ett rör)
363,97 kr
(exkl. moms)
454,96 kr
(inkl. moms)
| Enheter | Per unit |
| 10 - 49 | 363,97 kr |
| 50 - 99 | 354,44 kr |
| 100 - 224 | 345,45 kr |
| 225 + | 336,91 kr |
- RS-artikelnummer:
- 229-6458P
- Tillv. art.nr:
- NTH4L015N065SC1
- Tillverkare / varumärke:
- onsemi
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 142 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247-4 |
| Series | SiC Power |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.012 Ω |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
- RS-artikelnummer:
- 229-6458P
- Tillv. art.nr:
- NTH4L015N065SC1
- Tillverkare / varumärke:
- onsemi