N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK onsemi NTBG080N120SC1
- RS-artikelnummer:
- 205-2450
- Tillv. art.nr:
- NTBG080N120SC1
- Tillverkare / varumärke:
- onsemi
760 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Varje
130,53 kr
(exkl. moms)
163,16 kr
(inkl. moms)
| Enheter | Per unit |
| 1 - 9 | 130,53 kr |
| 10 - 99 | 112,45 kr |
| 100 - 249 | 111,12 kr |
| 250 - 499 | 109,57 kr |
| 500 + | 105,80 kr |
- RS-artikelnummer:
- 205-2450
- Tillv. art.nr:
- NTBG080N120SC1
- Tillverkare / varumärke:
- onsemi
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance
High Junction temperature
Ultra low gate charge
Low effective output capacitance
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 110 mΩ |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
- RS-artikelnummer:
- 205-2450
- Tillv. art.nr:
- NTBG080N120SC1
- Tillverkare / varumärke:
- onsemi