N-Channel MOSFET, 30.8 A, 600 V, 4-Pin TO-247 TK31Z60X,S1F(O

  • RS-artikelnummer 185-6182
  • Tillv. art.nr TK31Z60X,S1F(O
  • Tillverkare / varumärke Toshiba
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): KR
Produktdetaljer

Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS
High-speed switching properties with lower capacitance.
Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)
Applications
Switching Voltage Regulators

Specifikationer
Attribute Value
Channel Type N
Maximum Continuous Drain Current 30.8 A
Maximum Drain Source Voltage 600 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 880 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 230 W
Transistor Configuration Single
Maximum Gate Source Voltage ±30 V
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Forward Diode Voltage 1.7V
Minimum Operating Temperature -55 °C
Width 5mm
Height 20.95mm
Length 15.94mm
Typical Gate Charge @ Vgs 65 nC @ 10 V
I lager för leverans inom 2 arbetsdagar
Pris (ex. moms) Each (In a Tube of 25)
25,25 kr
(exkl. moms)
31,56 kr
(inkl. moms)
Enheter
Per unit
Per Tube*
25 +
25,25 kr
631,25 kr
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