Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ350DT-T1-GE3
- RS-artikelnummer:
- 178-3944
- Tillv. art.nr:
- SiZ350DT-T1-GE3
- Tillverkare / varumärke:
- Vishay Siliconix
2890 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 10)
4,484 kr
(exkl. moms)
5,605 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 10 + | 4,484 kr | 44,84 kr |
- RS-artikelnummer:
- 178-3944
- Tillv. art.nr:
- SiZ350DT-T1-GE3
- Tillverkare / varumärke:
- Vishay Siliconix
Datablad
Lagstiftning och ursprungsland
RoHS-status: Inte relevant
- COO (Country of Origin):
- TW
Produktdetaljer
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAIR 3 x 3 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 16.7 W |
| Maximum Gate Source Voltage | -12 V, +16 V |
| Width | 3mm |
| Typical Gate Charge @ Vgs | 13.5 nC @ 10 V |
| Number of Elements per Chip | 2 |
| Length | 3mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 0.75mm |
| Forward Diode Voltage | 1.2V |
- RS-artikelnummer:
- 178-3944
- Tillv. art.nr:
- SiZ350DT-T1-GE3
- Tillverkare / varumärke:
- Vishay Siliconix