IRLD120PBF N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay

  • RS-artikelnummer 178-0923
  • Tillv. art.nr IRLD120PBF
  • Tillverkare / varumärke Vishay
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Lagstiftning och ursprungsland
RoHS-Försäkran
Produktdetaljer

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifikationer
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1.3 A
Maximum Drain Source Voltage 100 V
Package Type HVMDIP
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 270 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1.3 W
Transistor Configuration Single
Maximum Gate Source Voltage -10 V, +10 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 12 nC @ 5 V
Length 5mm
Transistor Material Si
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Width 6.29mm
Height 3.37mm
2100 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Tube of 100)
5,35 kr
(exkl. moms)
6,69 kr
(inkl. moms)
Enheter
Per unit
Per Tube*
100 +
5,35 kr
535,00 kr