N-Channel MOSFET, 25 A, 60 V, 3-Pin DPAK Vishay SQD25N06-22L_GE3
- RS-artikelnummer:
- 170-8300
- Tillv. art.nr:
- SQD25N06-22L_GE3
- Tillverkare / varumärke:
- Vishay
Tillfälligt slut i lager – restorder för leverans 2024-10-04
Lagt till varukorgen
Pris (ex. moms) Var (i en rulle med 2000)
7,753 kr
(exkl. moms)
9,691 kr
(inkl. moms)
| Enheter | Per unit | Per Reel* |
| 2000 + | 7,753 kr | 15 506,00 kr |
- RS-artikelnummer:
- 170-8300
- Tillv. art.nr:
- SQD25N06-22L_GE3
- Tillverkare / varumärke:
- Vishay
Lagstiftning och ursprungsland
Produktdetaljer
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Series | SQ Rugged |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 49 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 62 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 6.22mm |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V |
| Length | 6.73mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Automotive Standard | AEC-Q101 |
| Height | 2.38mm |
| Minimum Operating Temperature | -55 °C |