- RS-artikelnummer:
- 165-8170
- Tillv. art.nr:
- BSR802NL6327HTSA1
- Tillverkare / varumärke:
- Infineon
Denna produkt har utgått
- RS-artikelnummer:
- 165-8170
- Tillv. art.nr:
- BSR802NL6327HTSA1
- Tillverkare / varumärke:
- Infineon
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifikationer
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 3.7 A |
Maximum Drain Source Voltage | 20 V |
Package Type | SOT-346 (SC-59) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 32 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 0.75V |
Minimum Gate Threshold Voltage | 0.3V |
Maximum Power Dissipation | 500 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -8 V, +8 V |
Number of Elements per Chip | 1 |
Width | 1.1mm |
Typical Gate Charge @ Vgs | 4.7 nC @ 2.5 V |
Length | 3mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 1.6mm |
Forward Diode Voltage | 1.1V |
Series | OptiMOS 2 |