N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3
- RS-artikelnummer:
- 165-6910
- Tillv. art.nr:
- SI2366DS-T1-GE3
- Tillverkare / varumärke:
- Vishay
3000 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i en rulle med 3000)
1,472 kr
(exkl. moms)
1,84 kr
(inkl. moms)
| Enheter | Per unit | Per Reel* |
| 3000 + | 1,472 kr | 4 416,00 kr |
- RS-artikelnummer:
- 165-6910
- Tillv. art.nr:
- SI2366DS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.8 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 42 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 2.1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 6.4 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 1.4mm |
| Length | 3.04mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 1.02mm |
- RS-artikelnummer:
- 165-6910
- Tillv. art.nr:
- SI2366DS-T1-GE3
- Tillverkare / varumärke:
- Vishay