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    P-Channel MOSFET, 9.3 A, 100 V, 3-Pin TO-220F onsemi FQPF22P10

    RS-artikelnummer:
    145-5452
    Tillv. art.nr:
    FQPF22P10
    Tillverkare / varumärke:
    onsemi
    onsemi
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    16,433 kr

    (exkl. moms)

    20,541 kr

    (inkl. moms)

    EnheterPer unitPer Tube*
    50 +16,433 kr821,65 kr
    RS-artikelnummer:
    145-5452
    Tillv. art.nr:
    FQPF22P10
    Tillverkare / varumärke:
    onsemi

    Lagstiftning och ursprungsland


    Produktdetaljer

    QFET® P-Channel MOSFET, Fairchild Semiconductor


    Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
    They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


    MOSFET Transistors, ON Semi


    ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
    ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

    Specifikationer

    AttributeValue
    Channel TypeP
    Maximum Continuous Drain Current9.3 A
    Maximum Drain Source Voltage100 V
    Package TypeTO-220F
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance125 mΩ
    Channel ModeEnhancement
    Minimum Gate Threshold Voltage2V
    Maximum Power Dissipation45 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-30 V, +30 V
    Typical Gate Charge @ Vgs40 nC @ 10 V
    Length10.36mm
    Transistor MaterialSi
    Maximum Operating Temperature+175 °C
    Width4.9mm
    Number of Elements per Chip1
    SeriesQFET
    Height16.07mm
    Minimum Operating Temperature-55 °C
    Tillfälligt slut i lager restorder för leverans när den finns i lager
    Add to Basket
    Enheter

    Tyvärr har vi inte denna produkt i lager.

    Restorder ej möjlig på grund av bristande allokering. Den evt. angivna systemtekniska leveranstiden är inte giltig.

    Lagt till varukorgen

    Pris (ex. moms) Each (In a Tube of 50)

    16,433 kr

    (exkl. moms)

    20,541 kr

    (inkl. moms)

    EnheterPer unitPer Tube*
    50 +16,433 kr821,65 kr