- RS-artikelnummer:
- 124-1745
- Tillv. art.nr:
- BS170
- Tillverkare / varumärke:
- onsemi
Tillfälligt slut i lager – restorder för leverans 2024-05-13
Lagt till varukorgen
Pris (ex. moms) Var (i en påse med 1000)
1,171 kr
(exkl. moms)
1,464 kr
(inkl. moms)
Enheter | Per unit | Per Bag* |
1000 - 2000 | 1,171 kr | 1 171,00 kr |
3000 + | 0,945 kr | 945,00 kr |
Alternativ
Denna produkt är för närvarande inte tillgänglig. Vi rekommenderar denna produkt istället.
- RS-artikelnummer
- 671-4736
Pris (ex. moms) Var (i ett paket med 10)
3,216 kr
(exkl. moms)
4,02 kr
(inkl. moms)
- RS-artikelnummer:
- 124-1745
- Tillv. art.nr:
- BS170
- Tillverkare / varumärke:
- onsemi
Lagstiftning och ursprungsland
Produktdetaljer
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifikationer
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 500 mA |
Maximum Drain Source Voltage | 60 V |
Package Type | TO-92 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 5 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3V |
Minimum Gate Threshold Voltage | 0.8V |
Maximum Power Dissipation | 830 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 5.2mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Width | 4.19mm |
Minimum Operating Temperature | -55 °C |
Height | 5.33mm |
- RS-artikelnummer:
- 124-1745
- Tillv. art.nr:
- BS170
- Tillverkare / varumärke:
- onsemi